JAN-03 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Basic Definitions

VISHAY
Vishay Semiconductors
V_RSM Surge reverse voltage (non-repetitive)
V_FRM Repetitive peak forward voltage
V_RRM Repetitive peak reverse voltage
V_FWM Crest working forward voltage
V_RWM Crest working reverse voltage
List of Symbols
A Anode
a Distance (in mm)
b_pn Normalized power factor
C Capacitance, general
C_case Case capacitance
C_D Diode capacitance
C_i Junction capacitance
C_L Load capacitance
C_P Parallel capacitance
E_R Reverse avalanche energy, non-repetitive
F Noise figure
f Frequency
f_g Cut-off-frequency
g Conductance
K Kelvin, absolute temperature
I_F Forward current
i_F Forward current, instantaneous total value
I_FAV Average forward current, rectified current
I_FRM Repetitive peak forward current
I_FSM Surge forward current, non-repetitive
I_FWM Crest working forward current
I_R Reverse current
I_RM Maximum reverse current
i_R Reverse current, instantaneous total value
I_RAV Average reverse current
I_RRM Repetitive peak reverse current
I_RSM Non-repetitive peak reverse current
I_RWM Crest working reverse current
I_S Supply current
I_Z Z-operating current
I_ZM Z-maximum current
l
Length (in mm), (case-holder/soldering point)
LOCEP (local epitaxy)
A registrated trade mark of TEMIC for a pro-
cess of epitaxial deposition on silicon. Applica-
tions occur in planer Z-diodes. It has an
advantage compared to the normal process,
with improved reverse current.
P Power
P_R Reverse Power
P_tot Total power dissipation
P_V Power dissipation, general
Pvp Pulse-power dissipation
Q Quality
Q_rr Reverse recovery charge
R_F Forward resistance
r_f Differential forward resistance
R_L Load resistor
r_P Parallel resistance, damping resistance
R_R Reverse resistance
r_r Differential reverse resistance
r_s Series resistance
R_thJA Thermal resistance between junction and
ambient
R_thJC Thermal resistance between junction and case
R_thJL Thermal resistance junction lead
r_z Differential Z-resistance in breakdown region
(range) r_z = r_zj + r_zth
r_zj Z-resistance at constant junction temperature,
inherent Z-resistance
r_zth Thermal part of the Z-resistance
T Temperature, measured in centigrade
T Absolute temperature, Kelvin temperature
T Period duration
T_amb Ambient temperature (range)
t_av Integration time
T_case Case temperature
t_fr Forward recovery time
T_j Junction temperature
T_K Temperature coefficient
T_L Connecting lead temperature in the holder (sol-
dering point) at the distance/(mm) from case
t_P Pulse duration (time)
t_{--p- Duty cycle}
T
t_r Rise time
t_rr Reverse recovery time
t_s Storage time
T_sd Soldering temperature
T_stg Storage temperature (range)
V_(BR) Breakdown voltage
VF Forward voltage
V_F Forward voltage, instantaneous total value
V_FAV Average forward voltage
V_o Rectified voltage
V_FP Turn on transient peak voltage
Document Number 84067
Rev. 7, 07-Jan-03
www.vishay.com
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