IRFR224 Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

IRFR224, IRFU224, SiHFR224, SiHFU224
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the
Pulsed Diode Forward Current^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
3.8
A
-
-
15
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = 3.8 A, V_GS = 0 V^b
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
-
200
400
ns
T_J = 25 °C, I_F = 4.4 A, dI/dt = 100 A/µs^b
Q_rr
-
0.93 1.9
µC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
Document Number: 91271
S-Pending-Rev. A, 17-Jun-08
Fig. 4 - Normalized On-Resistance vs. Temperature
www.vishay.com
3