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| ILD3 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output (Dual, Quad Channel) | |||
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VISHAY
ILD3/ ILQ3
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance, junction to
lead
Test condition
IF = 60 mA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.65
V
IR
0.01
10
µA
25
pF
Rthjl
750
K/W
Output
Parameter
Collector-emitter leakage
current
Collector-emitter capacitance
Thermal resistance, junction to
lead
Test condition
VCE = 15 V
VCE = 5.0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
ICEO
5.0
70
nA
CCE
6.8
pF
Rthjl
500
K/W
Coupler
Parameter
Capacitance (input-output)
Test condition
VIO = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
CIO
0.8
pF
Current Transfer Ratio
Parameter
Saturated Current Transfer
Ratio (ILD/Q3-1)
Saturated Current Transfer
Ratio (ILD/Q3-2)
Test condition
IF = 1.6 mA, VCE = 0.4 V
IF = 1.0 mA, VCE = 0.4 V
Part
Symbol
Min
Typ.
Max
Unit
ILD3
CTRsat
300
%
ILD3
CTRsat
100
%
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection output VCM = 50 VP-P, RL = 10 Kâ¦,
high
IF = 0 mA
CMH
5000
V/µs
Common mode rejection output VCM = 50 VP-P, RL = 10 Kâ¦
low
IF = 0 mA
CML
5000
V/µs
Common mode coupling
capacitance
CCM
0.01
pF
Document Number 83655
Rev. 1.3, 19-Apr-04
www.vishay.com
3
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