GSIB4A20 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Glass Passivated Single-In-Line Bridge Rectifier

GSIB4A20 thru GSIB4A80
Vishay General Semiconductor
100
T_J = 150 °C
10
1
T_J = 25 °C
T_J = 125 °C
0.1
0.01
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
1000
100
10
1
0
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
10
T_J = 150 °C
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GSIB-3G
0.118 x 45° Chamfer
0.602 (15.3)
0.579 (14.7)
0.157 (4.0) ₊
0.996 (25.3)
0.972 (24.7)
0.492
(12.5)
0.134 (3.4)
0.122 (3.1)
DIA.
0.150 (3.8)
0.134 (3.4)
Detail Z
Enlarged
0.059 ^{0.382 (9.7)}
(1.50) 0.366 (9.3)
Z
0.057 (1.45)
0.041 (1.05)
0.709 (18.0)
0.669 (17.0)
0.146 (3.7)
0.130 (3.3)
0.709 (18.0)
0.669 (17.0)
0.078 (1.98)
0.062 (1.58)
0.303 (7.7) _{(3 x)}
0.287 (7.3)
0.042 (1.07)
0.038 (0.96)
DIA.
0.012
(0.30)
0.189 (4.8)
0.173 (4.4)
0.126 (3.2)
0.110 (2.8)
Document Number: 88858 For technical questions within your region, please contact one of the following:
Revision: 01-Feb-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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