GBU6A_15 Datasheet, PDF (3/5 Pages) Rugao Dachang Electronics Co., Ltd – Single-phase Silicon Bridge Rectifier

GBU6A, GBU6B, GBU6D, GBU6G, GBU6J, GBU6K, GBU6M
www.vishay.com
Vishay General Semiconductor
100
10
1
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.1
10 000
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
1000
100
10
T_A = 150 °C
T_A = 125 °C
T_A = 100 °C
1
T_A = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.020 R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.075
(1.9.) R
0.740 (18.8)
0.720 (18.3)
0.080 (2.03)
0.060 (1.52)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.710 (18.0)
0.690 (17.5)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.085 (2.16)
0.075 (1.90)
0.080 (2.03)
0.065 (1.65)
0.190 (4.83)
0.210 (5.33)
0.026 (0.66)
0.020 (0.51)
Polarity shown on front side of case, positive lead by beveled corner
Revision: 02-Apr-15
3
Document Number: 88615
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000