GBL005 Datasheet, PDF (3/4 Pages) Won-Top Electronics – 4.0A GLASS PASSIVATED BRIDGE RECTIFIER

GBL005 thru GBL10
Vishay General Semiconductor
100
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
100
0.1
0.01
0.4
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
50 - 400 V
600 - 1000 V
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
100
T_A = 125 °C
10
10
50 - 400 V
1
60 - 1000 V
1
0.1
T_A = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBL
0.125 (3.17) x 45°
Chamfer
0.825 (20.9)
0.815 (20.7)
0.080 (2.03)
0.060 (1.50)
0.421 (10.7)
0.411 (10.4)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.050 (1.27)
0.040 (1.02)
0.040 (1.02)
0.030 (0.76)
0.210 (5.3)
0.190 (4.8)
0.026 (0.66)
0.020 (0.51)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead beveled corner
Document Number: 88609 For technical questions within your region, please contact one of the following:
Revision: 30-Apr-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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