ESH2PB Datasheet, PDF (3/4 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
ESH2PB, ESH2PC & ESH2PD
Vishay General Semiconductor
100
10
T_J = 175 °C
T_J = 150 °C
1
0.1
T_J = 25 °C
T_J = 125 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
10
1
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
0.1
T_J = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.105
(2.67)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Document Number: 89016 For technical questions within your region, please contact one of the following:
Revision: 13-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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