ESH2B_08 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

New Product
ESH2B, ESH2C & ESH2D
Vishay General Semiconductor
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
1
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
0.1
T_J = 25 °C
0.01
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 MIN.
(2.18 MIN.)
0.085 MAX.
(2.159 MAX.)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 84649 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
[e-mail], [e-mail], [e-mail]
www.vishay.com
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