ESH1PB_11 Datasheet, PDF (3/4 Pages) Vishay Siliconix – High Current Density Surface Mount Ultrafast Rectifiers

New Product
ESH1PB, ESH1PC, ESH1PD
Vishay General Semiconductor
100
1000
10
T_J = 175 °C
T_J = 150 °C
1
0.1
T_J = 25 °C
T_J = 125 °C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
1000
100
10
1
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
0.1
T_J = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
1000
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.087 (2.20)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.105
(2.67)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Document Number: 88895 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000