ESH1B_11 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

New Product
ESH1B, ESH1C, ESH1D
Vishay General Semiconductor
100
T_J = 175 °C
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
T_J = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Leakage Characteristics
100
T_J = 125 °C
10
T_J = 150 °C
1 ^TJ ^{= 175 °C}
T_J = 25 °C
0.1
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
10
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89401 For technical questions within your region, please contact one of the following:
Revision: 19-Apr-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000