ESH1B Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifiers

ESH1B, ESH1C & ESH1D
Vishay General Semiconductor
100
T_J = 175 °C
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
T_J = 125 °C
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Reverse Leakage Characteristics
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
100
100
T_J = 125 °C
10
T_J = 150 °C
1 ^TJ ^{= 175 °C}
T_J = 25 °C
10
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88890 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
[e-mail], [e-mail], [e-mail]
www.vishay.com
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