ES1D-E3-11T Datasheet, PDF (3/4 Pages) Vishay Siliconix – Surface Mount Ultrafast Plastic Rectifier

ES1A thru ES1D
Vishay General Semiconductor
100
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 100 °C
0.1
T_J = 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
14
T_J = 25 °C
12
f = 1.0 MHz
V_sig = 50 mVp-p
10
8
6
4
2
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
100
Mounted on 0.2 x 0.2" (5 x 7 mm)
Copper Pad Areas
10
1
T_J = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
www.vishay.com
652
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
For technical questions within your region, please contact one of the following: Document Number: 88586
[e-mail], [e-mail], [e-mail]
Revision: 27-Aug-08