DG611_08 Datasheet, PDF (3/10 Pages) Vishay Siliconix – High-Speed, Low-Glitch D/CMOS Analog Switches

DG611/612/613
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V+ to V-
- 0.3 to 21
V+ to GND
- 0.3 to 21
V- to GND
V_L to GND
V_INa
V_S, V_Da
Continuous Current (Any Terminal)
Current, S or D (Pulsed at 1 µs, 10 % Duty Cycle)
- 19 to 0.3
- 1 to (V+) + 1
or 20 mA, whichever occurs first
V
(V-) - 1 to (V+) + 1
or 20 mA, whichever occurs first
(V-) - 0.3 to (V+) + 16
or 20 mA, whichever occurs first
± 30
mA
± 100
Storage Temperature
Power Dissipation (Package)^b
CerDIP
Plastic
16-Pin Plastic DIP^c
16-Pin Narrow SOIC^d
16-Pin CerDIP^e
20-Pin LCC^e
- 65 to 150
°C
- 65 to 125
470
600
mW
900
900
Notes:
a. Signals on S_X, D_X, or IN_X exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
RECOMMENDED OPERATING RANGE
Parameter
V+
V-
V_L
V_IN
V_ANALOG
Limit
Unit
5 to 21
- 10 to 0
4 to V+
V
0 to V_L
V- to (V+) - 5
Document Number: 70057
S-71155–Rev. H, 11-Jun-07
www.vishay.com
3