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DG428 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers
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DG428/429
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or
30 mA, whichever occurs first
Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AK Suffix) . . . . . . . . . . . . . . . . . . –65 to 150_C
(DJ, DN Suffix) . . . . . . . . . . . . . . –65 to 125_C
Power Dissipation (Package)b
18-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
18-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW
20-Pin PLCCf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mW
28-Pin Widebody SOICf . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
Notes:
a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6.3 mW/_C above 75_C.
d. Derate 12 mW/_C above 75_C.
e. Derate 10 mW/_C above 75_C.
f. Derate 6 mW/_C above 75_C.
SPECIFICATIONSa
Parameter
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
Greatest Change in rDS(on)
Between Channelsg
Source Off
Leakage Current
Drain Off
Leakage Current
Symbol
VANALOG
rDS(on)
DrDS(on)
IS(off)
ID(off)
Drain On
Leakage Current
ID(on)
Digital Control
Logic Input Current
Input Voltage High
IAH
Logic Input Current
Input Voltage Low
IAL
Logic Input Capacitance
Cin
Dynamic Characteristics
Transition Time
Break-Before-Make Interval
Enable and Write
Turn-On Time
Enable and Reset
Turn-Off Time
Charge Injection
tTRANS
tOPEN
tON(EN,WR)
tOFF(EN,RS)
Q
Off Isolation
Source Off Capacitance
Drain Off Capacitance
OIRR
CS(off)
CD(off)
Drain On Capacitance
CD(on)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V– = –15 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Mind Maxd Mind Maxd Unit
Full
–15
15
–15
15
V
VD = "10 V, VAL = 0.8 V
IS = –1 mA, VAH = 2.4 V
Room
55
Full
100
125
100
125
W
–10 V < VS < 10 V
IS = –1 mA
Room
5
%
VS = "10 V, VD = #10 V
VEN = 0 V
Room "0.03 –0.5
0.5
–0.5
0.5
Full
–50
50
–50
50
VD = "10 V
VS = #10 V
VEN = 0 V
DG428
Room "0.07
–1
1
Full
–100 100
–1
1
–100 100
DG429
Room "0.05
–1
Full
–50
1
50
–1
–50
1
50
nA
VS = VD = "10 V
VEN = 2.4 V
VAL = 0.8 V
VAH = 2.4 V
DG428
DG429
Room "0.07
–1
1
Full
–100 100
Room "0.05
–1
1
Full
–50
50
–1
1
–100 100
–1
1
–50
50
VA = 2.4 V
VA = 15 V
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
f = 1 MHz
Full
0.01
1
1
Full
0.01
1
1
mA
Full
–0.01
–1
–1
Room
8
pF
See Figure 5
Room
150
250
250
Full
300
300
See Figure 4
See Figures 6 and 7
Full
30
Room
90
Full
10
10
150
150
ns
225
225
See Figures 6 and 8
Room
55
Full
150
150
300
300
VGEN = 0 V, RGEN = 0 W
CL = 1 nF, See Figure 9
Room
1
pC
VEN = 0 V, RL = 300 W, CL = 15 pF
VS = 7 VRMS, f = 100 kHz
Room
–75
dB
VS = 0 V, VEN = 0 V, f = 1 MHz
Room
11
DG428
Room
40
VD = 0 V, VEN = 0 V
DG429
Room
20
pF
f = 1 MHz
DG428
Room
54
DG429
Room
34
Document Number: 70063
S-52433—Rev. J, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
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