DG417B_09 Datasheet, PDF (3/16 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches

SCHEMATIC DIAGRAM Typical Channel
V+
V_L
V_IN
GND
V-
Level
Shift/
Drive
Figure 1.
DG417B, DG418B, DG419B
Vishay Siliconix
S
V-
V+
D
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source
On-Resistance
Symbol
V_ANALOG
R_DS(on)
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^f
I_S = - 10 mA, V_D = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
Switch Off Leakage Current
I_S(off)
I_D(off)
V+ = 16.5, V- = - 16.5 V DG417B
V_D = ± 15.5 V, V_S = ± 15.5 V DG418B
DG419B
Channel On Leakage Current I_D(on)
V+ = 16.5 V, V- = - 16.5 V
V_S = V_D = ± 15.5 V
DG417B
DG418B
DG419B
Digital Control
Temp.^b
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Input Current, V_IN Low
Input Current, V_IN High
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Transition Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolation^e
Channel-to-Channel
Crosstalk^e
I_IL
Full
I_IH
Full
t_ON
t_OFF
t_TRANS
t_D
Q
OIRR
X_TALK
R_L = 300 Ω, C_L = 35 pF
V_S = ± 10 V, See Switching
Time Test Circuit
DG417B
DG418B
DG417B
DG418B
R_L = 300 Ω, C_L = 35 pF
V_S1 = ± 10 V, V_S2 = ± 10 V
DG419B
R_L = 300 Ω, C_L = 35 pF
V_S1 = V_S2 = ± 10 V
DG419B
C_L = 10 nF
V_gen = 0 V, R_gen = 0 Ω
R_L = 50 Ω, C_L = 5 pF,
f = 1 MHz
Room
Full
Room
Full
Room
Full
Room
Room
Room
DG419B Room
Typ.^c
15
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
62
53
60
16
38
- 82
- 88
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Min.^d Max.^d Min.^d Max.^d Unit
- 15 15 - 15 15 V
25
34
25
29
Ω
- 0.25 0.25 - 0.25 0.25
- 20 20
-5
5
- 0.25 0.25 - 0.25 0.25
- 20 20
-5
5
- 0.75
- 60
0.75
60
- 0.75
- 12
0.75
12
nA
- 0.4 0.4 - 0.4 0.4
- 40 40 - 10 10
- 0.75 0.75 - 0.75 0.75
- 60 60 - 12 12
- 0.5 0.5 - 0.5 0.5
µA
- 0.5 0.5 - 0.5 0.5
89
106
80
88
87
96
3
3
89
99
80
86
ns
87
93
pC
dB
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
www.vishay.com
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