DG2720 Datasheet, PDF (3/8 Pages) Vishay Siliconix – 2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch

DG2720
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Limit
Unit
Reference to GND
V+
S, OE, D±, HSD1±, HSD2±^a
- 0.3 to 5.0
V
- 0.3 to (V+ + 0.3)
Current (Any Terminal except S, OE, D±, HSD1±, HSD2±)
30
Continuous Current (S, OE, D±, HSD1±, HSD2±)
± 250
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 500
Storage Temperature (D Suffix)
Power Dissipation (Packages)^b
miniQFN-10^c
- 65 to 150
°C
208
mW
ESD (Human Body Model) I/O to GND
8
kV
Latch-up (Current Injection)
350
mA
Notes:
a. Signals on S, OE, D±, HSD1±, HSD2± exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current
ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
SPECIFICATIONS V+ = 3.0 V
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Limits
- 40 to 85 °C
Temp.^a Min.^b Typ.^c Max.^b Unit
Analog Switch
Analog Signal Range^d
V_ANALOG
r_DS(on)
Full
0
V+ V
On-Resistance
On-Resistance Match^d
R_DS(on)
ΔR_ON
V+ = 3.0 V, I_D± = 8 mA, V_HSD1/2± = 0.4 V
V+ = 3.0 V, I_D± = 8 mA, V_HSD1/2± = 0.4 V
Room
Full
Room
5.7 7
9
0.35
Ω
On-Resistance Resistance Flatness^{d R}ON ^{Flatness V+ = 3.0 V, I}D± ^{= 8 mA, V}HSD1/2± ^{= 0.0 V, 1.0 V Room}
2
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
I_(off)
V+ = 4.3 V, V_HSD1/2± = 0.3 V, 3.0 V,
V_D± = 3.0 V, 0.3 V
Full - 100
100
nA
I_(on)
V+ = 4.3 V, V_HSD1/2± = 0.3 V, 4.0 V,
V_D± = 4.0 V, 0.3 V
Full - 200
200
Input Voltage High
Input Voltage Low
Input Capacitance
Input Current
V_INH
V_INL
C_IN
I_INL or I_INH
V+ = 3.0 V to 3.6 V
V+ = 4.3 V
V+ = 3.0 V to 4.3 V
V_IN = 0 or V+
Full 1.3
Full 1.7
Full
V
0.5
Full
5.6
pF
Full - 1
1 µA
Document Number: 74593
S-81473-Rev. C, 23-Jun-08
www.vishay.com
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