DG271MIL Datasheet, PDF (3/5 Pages) Vishay Siliconix – High-Speed Quad Monolithic SPST CMOS Analog Switch

DG271MIL
Vishay Siliconix
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
Symbol
V_ANALOG
r_DS(on)
I_S(off)
I_D(off)
I_D(on) +
I_S(on)
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V
V_IN = 2.4 V, 0.8 V^f
I_S = 1 mA, V_D = "10 V
V_D = "14 V, V_S = #14 V
V_S = V_D = "14 V
Temp^b
A Suffix
–55 to 125_C
Min^d Typ^c Max^d
Unit
Full
–15
15
V
Room
Full
32
50
75
W
Room
–1
"0.05
1
Full
–60
60
Room
Full
–1
"0.05
–60
1
60
nA
Room
–1
"0.05
1
Full
–60
60
Input Current with Voltage High
I_INH
Input Current with Voltage Low
I_INL
Dynamic Characteristics
V_IN = 2 V
V_IN = 15 V
V_IN = 0 V
Full
–1
0.010
1
Full
–1
0.010
1
mA
Full
–1
0.010
1
Turn-On Time
Turn-Off Time
Charge Injection
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Off Isolation
Crosstalk
Supply
t_ON
t_OFF
Q
C_S(off)
C_D(off)
C_D(_on)
OIRR
X_TALK
V_S = "10 V
See Figure 3
C_L = 1 nF, V_S = 0 V
V_gen = 0 V, R_gen = 0 W
See Figure 3
V_S = 0 V, V_IN = 5 V
f = 1 MHz
V_D = V_S = 0 V, V_IN = 0 V
C_L = 10 pF, R_L = 1 kW
f = 100 kHz
See Figures 4 and 5
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
55
65
80
ns
50
65
80
–5
pC
8
8
pF
30
85
dB
100
Positive Supply Current
Negative Supply Current
I+
I–
All Channels On or Off
V_IN = 5 V or 0 V
Room
5.5
7.5
Full
9
mA
Room
–6
–3.4
Full
–8
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Document Number: 70043
S-63984—Rev. G, 23-Aug-99
www.vishay.com S FaxBack 408-970-5600
4-3