DG2517 Datasheet, PDF (3/7 Pages) Vishay Siliconix – 3ohm, High Bandwidth, Dual SPDT Analog Switch

DG2517/DG2518
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Parameter
Analog Switch
Analog Signal Range^d
On-Resistance
r_ON Flatness
r_ON Match Between Channels
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
Input High Voltage^d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
- 3 dB Bandwidth
Off-Isolation^d
Crosstalk^d
Source-Off Capacitance^d
Channel-On Capacitance^d
Power Supply
Power Supply Range
Power Supply Current
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, V_IN = 0.8 or 2.0 V^e
Temp^a
V_NO, V_NC,
V_COM
r_ON
V+ = 4.2 V, V_COM = 3.5 V, I_NO/NC = 10 mA
r_ON
Flatness
V+ = 4.2 V, V_COM = 1, 2, 3.5 V
I_NO/NC = 10 mA
Δr_ON
V+ = 4.2 V, V_COM = 3.5 V, I_NO/NC = 10 mA
I_NO(off),
I_NC(off)
I_COM(off)
V+ = 5.5 V
V_NO, V_NC = 1 V/4.5 V, V_COM = 4.5 V/1 V
I_COM(on) V+ = 5.5 V, V_COM = V_NO, V_NC = 1 V/4.5 V
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
V_INH
Full
V_INL
Full
C_in
Full
I_INL or I_INH
V_IN = 0 V or V+
Full
t_ON
t_OFF
t_d
Q_INJ
BW
OIRR
X_TALK
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
V+ = 4.2 V, V_NO or V_NC = 3 V
R_L = 300 Ω, C_L = 35 pF
V_NO or V_NC = 3 V, R_L = 300 Ω, C_L = 35 pF
C_L = 1 nF, V_GEN = 2.5 V, R_GEN = 0 Ω
0 dBm, C_L = 5 pF, R_L = 50 Ω
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz
f = 10 MHz
R_L = 50 Ω, C_L = 5 pF
f = 1 MHz
f = 10 MHz
V_IN = 0 or V+, f = 1 MHz
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
V+
I+
V_IN = 0 or V+
Full
Limits
- 40 to 85 °C
Min^b
Typ^c
Max^b
0
V+
3
4.0
4.3
1.1
1.4
1.6
0.1
0.3
0.4
-1
1
- 10
10
-1
1
- 10
10
-1
1
- 10
10
2.0
0.8
4
1
1
12
25
45
8
20
30
1
2
157
- 67
- 47
- 67
- 47
8
8
35
35
1.8
5.5
0.01
1.0
Unit
V
Ω
nA
V
pF
µA
ns
pC
MHz
dB
pF
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V_IN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74333
S-61774-Rev. A, 11-Sep-06
www.vishay.com
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