DG201HS Datasheet, PDF (3/9 Pages) TEMIC Semiconductors – High-Speed Quad SPST CMOS Analog Switch

DG201HS
Vishay Siliconix
SPECIFICATIONS^a
Parameter
Analog Switch
Analog Signal Range^e
Drain-Source On-Resistance
r_DS(on) Match
Switch Off Leakage Current
Symbol
V_ANALOG
r_DS(on)
I_S(off)
I_D(off)
Channel On Leakage Current
I_D(on)
Digital Control
Input, High Voltage
Input, Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
Turn-On Time
t_ON
Turn-Off Time
Output Settling Time to 0.1%
Charge Injection
t_OFF1
t_OFF2
t_s
Q
OFF Isloation
OIRR
Crosstalk
(Channel-to-Channel)
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Drain-to-Source Capacitance
Power Supplies
X_TALK
C_S(off)
C_D(off)
C_D(on)
C_DS(off)
Positive Supply Current
I+
Negative Supply Current
I–
Power Consumption^c
P_C
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V
V_IN = 3 V, 0.8 V^f
Temp^b
Typ^c
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Min^d Max^d Min^d Max^d
Unit
I_S = –10 mA, V_D = "8.5 V
V+ = 13.5 V, V– = –13.5 V
V+ = 16.5 V, V– = –16.5 V
V_{D =} "15.5 V
V_S = #15.5 V
V+ = 16.5 V, V– = –16.5 V
V_S = V_D = #15.5 V
Full
V–
V+
V–
V+
V
Room
25
Full
50
75
50
75
W
Room
3
%
Room
0.1
–1
1
–1
1
Full
–60
60
–20
20
Room
0.1
Full
–1
1
–1
1
–60
60
–20
20
nA
Room
0.1
–1
1
–1
1
Full
–60
60
–20
20
V_IN under test = 0.8 V, 3 V
Full
2.4
2.4
V
Full
0.8
0.8
Full
5
pF
Full
–1
1
–1
1
mA
R_L = 1 kW, C_L = 35 pF
V_S = "10 V, V_INH = 3 V
See Figure 2
Room
48
Full
Room
30
Full
60
60
75
75
50
50
70
70
ns
Room
150
Room
180
C_L = 1 nF, V_S = 0 V
V_gen = 0 V, R_gen = 0 W
Room
–5
pC
R_L = 1 kW, C_L = 10 pF
f = 100 kHz
Room
85
Any Other Channel Switches
dB
R_L = 1 kW, C_L = 10 pF
f = 100 kHz
Room
100
Room
8
Room
8
V_S, V_D = 0 V, f = 1 MHz
pF
Room
30
Room
0.5
V+ = 15 V, V– = –15 V
V_IN = 0 or 5 V
Room
4.5
Full
Room
3.5
Full
Full
10
10
mA
–6
–6
240
240
mW
Document Number: 70038
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
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