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DG2012_08 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Low-Voltage Single SPDT Analog Switch
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DG2012
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Parameter
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatness
rON MatchFlat
Switch Off Leakage Currentf
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.6 or 2.0 Ve
VNO, VNC
VCOM
rON
rON
Flatness
ΔrON
INO(off)
INC(off)
ICOM(off)
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO
INC = 10 mA
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
Channel-On Leakage Currentf
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitanced
Input Currentf
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injectiond
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
Power Supply
Power Supply Range
Power Supply Current
ICOM(on)
VINH
VINL
Cin
IINL or IINH
tON
tOFF
td
QINJ
OIRR
XTALK
CNO(off)
CNC(off)
CON
V+
I+
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
VIN = 0 or V+
VNO or VNC = 2.0 V, RL = 300 Ω, CL = 35 pF
Figures 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, Figure 3
RL = 50 Ω, CL = 5 pF, f = 1 MHz
VIN = 0 or V+, f = 1 MHz
VIN = 0 or V+
Tempa
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Limits
- 40 to 85 °C
Minb Typc Maxb
0
V+
1.4
2.1
1.6
2.3
0.85
0.25
- 0.5
0.5
- 5.0
5.0
- 0.5
0.5
- 5.0
5.0
- 0.5
0.5
- 5.0
5.0
2
0.6
3
-1
1
27
47
48
17
37
38
1
10
- 63
- 64
21
57
1.8
5.5
0.01 1.0
Unit
V
Ω
nA
V
pF
µA
ns
pC
dB
pF
V
µA
Document Number: 72176
S-70852-Rev. B, 30-Apr-07
www.vishay.com
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