English
Language : 

CNY17 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, With Base Connection
CNY17
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Thermal resistance
Test condition
IF = 60 mA
IR = 10 mA
VR = 6.0 V
VR = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
VF
1.25
1.65
V
VBR
6.0
V
IR
0.01
10
µA
CO
25
pF
Rth
750
K/W
Output
Parameter
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Thermal resistance
Test condition
VCE = 5.0 V, f = 1.0 MHz
VCB = 5.0 V, f = 1.0 MHz
VEB = 5.0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
CCE
5.2
pF
CCB
6.5
pF
CEB
7.5
pF
Rth
500
K/W
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Collector-emitter leakage
current
Test condition
VF = 10 mA, IC = 2.5 mA
VCE = 10 V, ICEO
Part
Symbol Min
VCEsat
CNY17-1
CC
ICEO
CNY17-2
CNY17-3
CNY17-4
ICEO
ICEO
ICEO
Typ.
0.25
0.6
2.0
2.0
5.0
5.0
Max Unit
0.4
V
pF
50
nA
50
nA
100
nA
100
nA
Current Transfer Ratio
Current Transfer Ratio and collector-emitter leakage current by dash number (Tamb°C)
Parameter
Test condition
Part
Symbol Min
Typ.
Max
Unit
IC/IF
IF = 10 mA, VCE = 5.0 V
CNY17-1
CTR
40
80
%
CNY17-2
CTR
63
125
%
CNY17-3
CTR
100
200
%
CNY17-4
CTR
160
320
%
IF = 1.0 mA, VCE = 5.0 V
CNY17-1
CTR
13
30
%
CNY17-2
CTR
22
45
%
CNY17-3
CTR
34
70
%
CNY17-4
CTR
56
90
%
Document Number 83606
Rev. 1.5, 26-Oct-04
www.vishay.com
3