CNY117F Datasheet, PDF (3/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, No Base Connection, 110 Degree Celcious Rated

CNY117F
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Test condition
I_F = 60 mA
I_R = 10 µA
V_R = 6.0 V
V_R = 0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
V_F
1.25
1.65
V
V_BR
6.0
V
I_R
0.01
10
µA
C_O
25
pF
Output
Parameter
Collector-emitter capacitance
Base - collector capacitance
Emitter - base capacitance
Test condition
V_CE = 5.0 V, f = 1.0 MHz
V_CE = 5.0 V, f = 1.0 MHz
V_CE = 5.0 V, f = 1.0 MHz
Symbol
Min
Typ.
Max
Unit
C_CE
5.2
pF
C_BC
6.5
pF
C_EB
7.5
pF
Coupler
Parameter
Saturation voltage, collector-
emitter
Coupling capacitance
Collector-emitter leakage
current
Test condition
I_F = 10 mA, I_C = 2.5 mA
V_CE = 10 V
Part
Symbol Min
Typ.
Max
Unit
V_CEsat
0.25
0.4
V
CNY117F-1
C_C
I_CEO
0.6
pF
2.0
50
nA
CNY117F-2
CNY117F-3
CNY117F-4
I_CEO
I_CEO
I_CEO
2.0
50
nA
5.0
100
nA
5.0
100
nA
Current Transfer Ratio
Current Transfer Ratio I_C/I_F at V_CE = 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Test condition
Part
Symbol Min
Typ.
Max
Unit
Current Transfer Ratio
I_F = 10 mA
CNY117F-1 CTR
40
80
%
CNY117F-2 CTR
63
125
%
CNY117F-3 CTR
100
200
%
CNY117F-4 CTR
160
320
%
I_F = 1.0 mA
CNY117F-1 CTR
13
30
%
CNY117F-2 CTR
22
45
%
CNY117F-3 CTR
34
70
%
CNY117F-4 CTR
56
90
%
Document Number 83598
Rev. 1.4, 26-Oct-04
www.vishay.com
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