BYV32_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Rectifier

BYV(F,B)32-50 thru BYV(F,B)32-200
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
20
Resistive or Inductive Load
18
16
12
8
4
0
0
25
50
75
100
125
150
Case Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
1000
100
T_C = 100 °C
10
1
0.1
0
T_C = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
150
T_J = 150 °C
125
10 ms Single Half Sine-Wave
100
75
50
25
0
1
10
100
Number of Cycles at 50 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
10
T_J = 125 °C
1
T_J = 25 °C
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
60
T_J = 25 °C
f = 1.0 MHz
50
V_sig = 5 mVp-p
40
30
20
10
0
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
Document Number: 88558 For technical questions within your region, please contact one of the following:
Revision: 05-May-08
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www.vishay.com
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