BU2006 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Enhanced PowerBridge Rectifiers

New Product
BU2006 thru BU2010
Vishay General Semiconductor
50
40
30
20
10
0
0
4
8
12
16
20
24
Average Forward Current (A)
Figure 3. Forward Power Dissipation
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
1000
100
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89298 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
[e-mail], [e-mail], [e-mail]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000