BPW16N_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Phototransistor, RoHS Compliant

BPW16N
Vishay Semiconductors ^{Silicon NPN Phototransistor, RoHS Compliant}
1
0.1
0.01
V_CE = 5 V
λ= 950 nm
0.001
0.01
0.1
1
10
94 8236
E_e - Irradiance (mW/cm²)
Fig. 4 - Collector Light Current vs. Irradiance
1
λ = 950 nm
0.1
E_e =1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
0.01
0.1
1
10
100
94 8237
V_CE - Collector Emitter Voltage (V)
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
20
f = 1 MHz
16
12
8
4
0
0.1
94 8240
1
10
100
V_CE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
12
10
V_CE = 5 V
R_L = 100 Ω
λ = 950 nm
8
6
4
t_off
2
t_on
0
0
4
8
12
16
94 8238
I_C - Collector Current (mA)
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
1.0
0.8
0.6
0.4
0.2
0
400
94 8241
600
800
1000
λ - Wavelength (nm)
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0
94 8312
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
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Document Number: 81515
Rev. 1.7, 08-Sep-08