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| BFS17 Datasheet, PDF (3/10 Pages) NXP Semiconductors – NPN 1 GHz wideband transistor | |||
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BFS17/BFS17R/BFS17W
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 25 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA
DC forward current transfer ratio VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.75 V
hFE 20 100 150
hFE
20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage â two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 25 mA, f = 300 MHz
VCB = 5 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
W VEB = 0.5 V, f = 1 MHz
VCE = 5 V, IC = 2 mA, ZS = 50 ,
f = 800 MHz
W VCE = 5 V, IC = 14 mA, ZS = 50 ,
f = 200 MHz
W VCE = 5 V, IC = 14 mA, ZS = 50 ,
f = 800 MHz
VCE = 5 V, IC = 14 mA, dIM = 60 dB,
W f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 5 V, IC = 14 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT
1.5
GHz
fT
2.4
GHz
fT
2.1
GHz
Ccb
0.45
pF
Cce
0.2
pF
Ceb
0.8
pF
F
3.5
dB
Gpe
23
dB
Gpe
11
dB
V1 = V2
100
mV
IP3
23
dBm
Document Number 85038
Rev. 4, 20-Jan-99
www.vishay.de ⢠FaxBack +1-408-970-5600
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