BFR182T_08 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR182T / BFR182TW
Vishay Semiconductors
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
V_CE = 6 V, I_C = 5 mA,
f_T
f = 500 MHz
5.5
GHz
V_CE = 8 V, I_C = 20 mA,
f_T
f = 500 MHz
7.5
GHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
0.3
pF
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
0.2
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
0.65
pF
Noise figure
V_CE = 6 V, I_C = 5 mA, Z_S = Z_Sopt,
F
f = 900 MHz
1.5
dB
V_CE = 6 V, I_C = 5 mA, Z_S = Z_Sopt,
F
f = 1.75 GHz
2.0
dB
Power gain
V_CE = 8 V, I_C = 20 mA,
G_pe
15
dB
Z_S = 50 Ω, Z_L = Z_Lopt,
f = 900 MHz
V_CE = 8 V, I_C = 20 mA,
G_pe
11
dB
Z_S = 50 Ω, Z_L = Z_Lopt,
f = 1.75 GHz
Transducer gain
V_CE = 8 V, I_C = 20 mA,
|S_21e|²
14
dB
f = 900 MHz, Z₀ = 50 Ω
Package Dimensions in mm (Inches)
0.4 (0.016) 0.4 (0.016)
3.1 (0.122)
2.8 (0.110)
0.4 (0.016)
C
0.175 (0.007)
0.098 (0.005)
0.1 (0.004) max.
2.6 (0.102)
2.35 (0.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
B
0.95 (0.037)
E
0.95 (0.037)
0.95 (0.037)
0.95 (0.037)
9511346
Document Number 85025
Rev. 1.4, 08-Sep-08
www.vishay.com
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