BFQ67F Datasheet, PDF (3/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
V_CE = 8 V, I_C = 15 mA,
f_T
f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
Collector-emitter capacitance V_CE = 8 V, f = 1 MHz
C_ce
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
Noise figure
V_CE = 8 V, Z_S = Z_Sopt,
F
f = 800 MHz, I_C = 5 mA
V_CE = 8 V, Z_S = 50 Ω, f = 2 GHz,
F
I_C = 5 mA
Power gain
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
I_C = 15 mA, f = 800 MHz
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
I_C = 15 mA, f = 2 GHz
Transducer gain
V_CE = 8 V, I_C = 15 mA,
f = 800 MHz, Z_O = 50 Ω
|S_21e|²
Linear output voltage - two tone
intermodulation test
V_CE = 8 V, I_C = 15 mA,
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
V₁ = V₂
Third order intercept point
V_CE = 8 V, I_C = 15 mA,
IP₃
f = 800 MHz
Package Dimensions in mm
BFQ67F
Vishay Semiconductors
Typ.
Max
Unit
7.5
GHz
0.4
pF
0.2
pF
0.85
pF
1.2
dB
2.5
dB
16
dB
8.5
dB
15
dB
160
mV
26
dBm
1.5 (0.059)
1.7 (0.066)
ISO Method E
3 x 0.20 (0.008)
3 x 0.30 (0.012)
0.1 B
0.1 A
1.5 (0.059)
1.7 (0.066)
0.4 (0.016)
0.65(0.026)
1.15( 0.045)
16866
0.5 (0.016)
1.0 (0.039)
0.5 (0.016)
Document Number 85097
Rev. 1.4, 05-Sep-08
www.vishay.com
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