BFQ67 Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 8 GHz wideband transistor

BFQ67/BFQ67R/BFQ67W
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 15 V, I_E = 0
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0
Collector-emitter saturation voltage I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 15 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
1 mA
V_(BR)CEO 10
V
V_CEsat
0.1 0.4 V
h_FE 65 100 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
V_CE = 8 V, I_C = 15 mA, f = 500 MHz
V_CB = 10 V, f = 1 MHz
V_CE = 8 V, f = 1 MHz
V_EB = 0.5 V, f = 1 MHz
V_CE = 8 V, Z_S = Z_Sopt, f = 800 MHz,
I_C = 5 mA
V_CE = 8 V, Z_S = Z_Sopt, f = 800 MHz,
W ^{IC = 15 mA}
V_CE = 8 V, Z_S = 50 , f = 2 GHz,
W ^{IC = 5 mA}
V_CE = 8 V, Z_S = 50 , f = 2 GHz,
W ^{IC = 15 mA}
V_CE = 8 V, Z_S = 50 , Z_L = Z_Lopt,
W ^{IC = 15 mA, f = 800 MHz}
V_CE = 8 V, Z_S = 50 , Z_L = Z_Lopt,
I_C = 15 mA, f = 2 GHz
V_CE = 8 V, I_C = 15 mA, d_IM = 60 dB,
W ^{f1 = 806 MHz, f2 = 810 MHz,}
Z_S = Z_L = 50
V_CE = 8 V, I_C = 15 mA, f = 800 MHz
Symbol Min Typ Max Unit
f_T
7.5
GHz
C_cb
0.4
pF
C_ce
0.2
pF
C_eb
0.85
pF
F
0.8
dB
F
1.5
dB
F
2.5
dB
F
3.0
dB
G_pe
15.5
dB
G_pe
8
dB
V₁ = V₂
160
mV
IP₃
26
dBm
Document Number 85022
Rev. 3, 20-Jan-99
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