BFP193T Datasheet, PDF (3/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP193T/BFP193TW/BFP193TRW
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0
Collector-emitter saturation voltage I_C = 50 mA, I_B =5 mA
DC forward current transfer ratio V_CE = 8 V, I_C = 30 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
1 mA
V_(BR)CEO 12
V
V_CEsat
0.1 0.5 V
h_FE 50 100 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point at
output
Test Conditions
V_CE = 8 V, I_C = 50 mA, f = 1 GHz
V_CB = 10 V, f = 1 MHz
V_CE = 10 V, f = 1 MHz
V_EB = 0.5 V, f = 1 MHz
W ^{VCE = 8 V, IC = 10 mA, ZS = ZSopt,}
Z_L = 50 , f = 900 MHz
W ^{VCE = 8 V, IC = 10 mA, ZS = ZSopt,}
Z_L = 50 , f = 2 GHz
W ^{VCE = 8 V, IC = 30 mA, ZS = ZSopt,}
Z_L = 50 , f = 900 MHz
V_CE = 8 V, I_C = 30 mA, Z_S = Z_Sopt,
W Z_L = 50 , f = 2 GHz
W V_CE = 8 V, I_C = 30 mA, Z₀ = 50 ,
f = 900 MHz
W V_CE = 8 V, I_C = 30 mA, Z₀ = 50 ,
f = 2 GHz
V_CE = 8 V, I_C = 50 mA, f = 900 MHz
Symbol Min Typ Max Unit
f_T
68
GHz
C_cb
0.5 0.9 pF
C_ce
0.25
pF
C_eb
1.6
pF
F
1.2
dB
F
2.1
dB
G_pe
18
dB
G_pe
12
dB
S_21e²
15
dB
S_21e²
9
dB
IP₃
33
dBm
Document Number 85015
Rev. 1, 20-Jan-99
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