English
Language : 

BFP182T Datasheet, PDF (3/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor
◁
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 15 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 15 mA, IB =1.5 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 10
V
VCEsat
0.1 0.4 V
hFE 50 90 150
hFE
100
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Test Conditions
VCE = 6 V, IC = 5 mA, f = 500 MHz
VCE = 8 V, IC = 20 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 8 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 900 MHz
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 1.75 GHz
W VCE = 8 V, IC = 20 mA, ZS = 50 ,
W ZL = ZLopt, f = 900 MHz
VCE = 8 V, IC = 20 mA, ZS = 50 ,
W ZL = ZLopt, f = 1.75 GHz
VCE = 8 V, IC = 20 mA, Z0 = 50 ,
f = 900 MHz
Symbol Min Typ Max Unit
fT
5.5
GHz
fT
7.5
GHz
Ccb
0.3
pF
Cce
0.2
pF
Ceb
0.7
pF
F
1.5
dB
F
2.0
dB
Gpe
18
dB
Gpe
12
dB
S21e2
15
dB
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (6)
 ▷