B120-M3_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifier

B120-M3, B130-M3, B140-M3, B150-M3, B160-M3
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Vishay General Semiconductor
0.8
B150 and B160
0.7
D = 0.8
D = 0.5
0.6
D = 0.3
0.5
D = 0.2
D = 1.0
0.4
D = 0.1
0.3
T
0.2
0.1
0
0
D = t_p/T t_p
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
40
30
20
10
0
1
10
100
Number of Cycles at 50 Hz
Fig. 4 - Typical Instantaneous Forward Characteristics
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0
B120 thru B140
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
0
B150 and B160
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Instantaneous Forward Characteristics
100 000
10 000
B120 thru B140 _{TJ = 150 °C}
B150 and B160
1000
100
T_J = 125 °C _{TJ = 25 °C}
10
1
0.1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 7 - Typical Reverse Leakage Characteristics
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
B120 thru B140
B150 and B160
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 8 - Typical Junction Capacitance
Revision: 09-Dec-13
3
Document Number: 89926
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