72631 Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7459DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
10000
Capacitance
0.008
0.006
V_GS = 10 V
8000
C_iss
6000
0.004
0.002
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 22 A
4000
2000
0
0
C_rss
6
C_oss
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 22 A
6
1.2
4
1.0
2
0.8
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
10
T_J = 150_C
1
T_J = 25_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
0.012
0.008
I_D = 22 A
0.004
0.1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72631
S-32678—Rev. A, 29-Dec-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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