3N246_08 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
100
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
10
T_J = 125 °C
1
T_J = 100 °C
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
0.1
0.01
0
T_J = 25 °C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBPM
0.125 x 45°
(3.2)
0.600 (15.24)
0.560 (14.22)
0.460 (11.68) _{0.500 (12.70)}
0.420 (10.67) _{0.460 (11.68)}
0.60
(15.2)
MIN.
0.034 (0.86)
0.028 (0.76)
DIA.
0.200 (5.08)
0.180 (4.57)
0.50 (12.7) MIN.
0.060
(1.52)
0.160 (4.1)
0.140 (3.6)
0.105 (2.67)
0.085 (2.16)
Polarity shown on front side of case: positive lead by beveled corner
Document Number: 88531 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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