2N4338 Datasheet, PDF (3/6 Pages) Calogic, LLC – N-Channel JFET Low Noise Amplifier

2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T_A = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340
2N4341
Parameter
Symbol
Test Conditions
Typ^a Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
g_fs
g_os
r_ds(on)
C_iss
C_rss
V_DS = 15 V, V_GS = 0 V, f = 1 kHz
V_DS = 0 V, V_GS = 0 V, f = 1 kHz
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
Equivalent Input Noise Voltage^c
e_n
V_DS = 10 V, V_GS = 0 V, f = 1 kHz
Noise Figure
NF
V_DS = 15 V, V_GS = 0 V
f = 1 kHz, R_G = 1 MW
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v3%.
c. This parameter not registered with JEDEC.
1.3
3
2
30
1500
5
7
1.5
3
6
1
4
mS
60
mS
800
W
7
pF
3
nV⁄
√Hz
1
dB
NPA
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
5
I_DSS @ V_DS = 10 V, V_GS = 0 V
g_fs @ V_DS = 10 V, V_GS = 0 V
8
f = 1 kHz
4
10 nA
1 nA
Gate Leakage Current
T_A = 125_C
I_D = 100 mA
500 mA
6
g_fs
4
3
I_DSS
2
2
1
0
0
–1
–2
–3
–4
V_GS(off) – Gate-Source Cutoff Voltage (V)
0
–5
100 pA
10 pA
1 pA
T_A = 25_C
I_GSS @ 125_C
500 mA
I_D = 100 mA
I_GSS @ 25_C
0.1 pA
0
6
12
18
24
30
V_DG – Drain-Gate Voltage (V)
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
www.vishay.com
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