20MQ060NPBF_10 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Schottky Rectifier, 2.1 A

Schottky Rectifier, 2.1 A
VS-20MQ060NPbF
Vishay Semiconductors
10
1
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
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V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
10
T_J = 150 °C
1
0.1
0.01
0.001
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
T_J = 25 °C
0.0001
0
10
20
30
40
50
60
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V_R - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
160
150
140
130
120
DC
110
D = 0.20
D = 0.25
100 D = 0.33
90 ^{D = 0.50}
D = 0.75
80
Square wave (D = 0.50)
70 _{Rated VR applied}
60 _{See note (1)}
50
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
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I_F(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.4
1.2
RMS limit
1.0
0.8
D = 0.20
D = 0.25
0.6
D = 0.33
D = 0.50
0.4
D = 0.75
DC
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4
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I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
100
At any rated load condition
and with rated V_RRM applied
following surge
10
T_J = 25 °C
10
0
10
20
30
40
50
60
1
10
100
1000
10 000
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V_R - Reverse Voltage (V)
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t_p - Square Wave Pulse Duration (μs)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Document Number: 94592 For technical questions within your region, please contact one of the following:
Revision: 26-Oct-10
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