1N1199A Datasheet, PDF (3/6 Pages) Diotec Semiconductor – Silicon-Power Rectifiers

1N1...A, 1N36..A Series
Medium Power
Vishay High Power Products
Silicon Rectifier Diodes, 12 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating case and
storage temperature range
T_C, T_Stg
Maximum internal thermal
resistance, junction to case
R_thJC DC operation
Thermal resistance,
case to sink
R_thCS Mounting surface, smooth, flat and greased
minimum
maximum
Torque applied to nut; non-lubricated threads
Mounting torque
minimum
maximum
Torque applied to nut; lubricated threads
minimum
maximum
Torque applied to device case; lubricated threads
Approximate weight
Case style
Note
(1) _{JEDEC registered values}
JEDEC
VALUES
- 65 to 200 ⁽¹⁾
UNITS
°C
2.0 ⁽¹⁾
0.5
°C/W
1.36 (12)
1.69 (15)
1.07 (9.45)
1.30 (11.55)
N·m
(lbf · in)
1.17 (10.35)
1.43 (12.65)
7.0
g
0.25
oz.
DO-203AA (DO-4)
Document Number: 93493
Revision: 24-Jun-08
For technical questions, contact: [e-mail]
www.vishay.com
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