VTS40100CT Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VTS40100CT
Vishay General Semiconductor
Electrical Characteristics
T_A = 25 °C unless otherwise specified
Parameter
Test condition
Breakdown voltage
at I_R = 1.0 mA T_J = 25 °C
Instantaneous forward voltage ^{(1) at I}F ^{= 5 A}
per leg
I_F = 10 A
T_J = 25 °C
I_F = 20 A
I_F = 5 A
I_F = 10 A T_J = 125 °C
I_F = 20 A
Reverse current at rated V_RM ^{(1) at V}R ^{= 70 V}
per leg
T_J = 25 °C
T_J = 125 °C
at V_R = 100 V T_J = 25 °C
T_J = 125 °C
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
T_A = 25 °C unless otherwise specified
Parameter
Typical thermal resistance per leg
Ratings and Characteristics Curves
(T_A = 25 °C unless otherwise noted)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
Symbol
Typ.
Max.
Unit
V_(BR)
100 (minimum)
-
V
0.463
-
0.535
-
0.664
0.73
V_F
0.375
-
V
0.445
-
0.605
0.67
13.7
500
µA
8.4
15
mA
I_R
69.6
1000
µA
22.5
45
mA
Symbol
R_θJC
VTS40100CT
2.0
Unit
°C/W
300
250
200
150
100
50
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88926
08-Dec-05