VT2060G_12 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
VT2060G, VFT2060G, VBT2060G & VIT2060G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
I_R = 1.0 mA T_A = 25 °C
V_BR
60 (minimum)
I_F = 5 A
Instantaneous forward voltage per diode ^{(1) IF = 10 A}
T_A = 25 °C
V_F
I_F = 5 A
I_F = 10 A
T_A = 125 °C
0.58
0.69
0.50
0.63
Reverse current per diode ⁽²⁾
V_R = 60 V
T_A = 25 °C
T_A = 125 °C
I_R
-
8.0
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
0.90
-
0.84
700
25
UNIT
V
V
µA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT2060G VFT2060G VBT2060G
Typical thermal resistance
per diode
per device
R_θJC
3.6
2.6
7.0
5.2
3.6
2.6
VIT2060G
3.6
2.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT2060G-E3/4W
1.87
ITO-220AB
VFT2060G-E3/4W
1.75
TO-263AB
VBT2060G-E3/4W
1.39
TO-263AB
VBT2060G-E3/8W
1.39
TO-262AA
VIT2060G-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
25
V(B,I)T2060G
20
15
VFT2060G
10
5
Mounted on Specific Heatsink
0
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.5
D = 0.3
D = 0.8
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Dissipation Characteristics Per Diode
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Document Number: 89133
Revision: 08-Sep-09