VSSB310-E3_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
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Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode
I_R = 1.0 mA
I_F = 2.5 A
I_F = 5.0 A
I_F = 2.5 A
I_F = 5.0 A
Reverse current per diode
V_R = 180 V
V_R = 200 V
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  40 ms}
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
V_F ⁽¹⁾
I_R ⁽²⁾
200 (minimum)
0.81
1.10
0.58
0.65
1.7
1.8
-
2.5
MAX.
-
-
1.60
-
0.73
-
-
150
10
UNIT
V
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT10200C VFT10200C
per diode
3.5
7.0
Typical thermal resistance
R_JC
per device
2.5
5.5
VBT10200C
3.5
2.5
VIT10200C
3.5
2.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT10200C-E3/4W
1.88
ITO-220AB
VFT10200C-E3/4W
1.72
TO-263AB
VBT10200C-E3/4W
1.37
TO-263AB
VBT10200C-E3/8W
1.37
TO-262AA
VIT10200C-E3/4W
1.44
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube

RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
V(B,I)T10200C
8
6
VFT10200C
4
2 Mounted on Specific Heatsink
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
10
9
8
7
6
5
4
3
2
1
0
0
D = 0.8
D = 0.3 ^{D = 0.5}
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T t_p
1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Device
Revision: 09-Sep-13
2
Document Number: 89177
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