VSMB1940ITX01 Datasheet, PDF (2/7 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 940 nm,GaAlAs Double Hetero

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VSMB1940ITX01
Vishay Semiconductors
180
160
140
120
100
80
60 R_thJA = 270 K/W
40
20
0
0 15 30 45 60 75 90 105 120
T_amb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
40 R_thJA = 270 K/W
20
0
0 15 30 45 60 75 90 105 120
T_amb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of V_F
Reverse current
Junction capacitance
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 μs
I_F = 1 mA
I_F = 100 mA
V_R = 5 V
V_R = 0 V, f = 1 MHz,
E = 0 mW/cm²
V_F
V_F
TK_VF
TK_VF
I_R
C_J
1.15
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
I_F = 100 mA, t_p = 20 ms
I_F = 1 A, t_p = 100 μs
I_F = 100 mA, t_p = 20 ms
I_F = 1 mA
I_F = 100 mA
I_e
3
I_e
e
TK_e
TK_e

Peak wavelength
Spectral bandwidth
Temperature coefficient of _p
Rise time
Fall time
Virtual source diameter
I_F = 30 mA
I_F = 30 mA
I_F = 30 mA
I_F = 100 mA, 20 % to 80 %
I_F = 100 mA, 20 % to 80 %
_p

TK_p
t_r
t_f
d
TYP.
1.35
2.2
-1.5
-1.1
70
6
60
40
-1.1
-0.51
± 60
940
25
0.25
15
15
0.5
MAX.
1.6
10
12
UNIT
V
V
mV/K
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
%/K
deg
nm
nm
nm
ns
ns
mm
Rev. 1.0, 03-Jun-14
2
Document Number: 84258
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