VSB2200S_12 Datasheet, PDF (2/4 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

VSB2200S
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage ⁽¹⁾
Reverse current per diode ⁽²⁾
Typical juntion capacitance
I_R = 1.0 mA
I_F = 2.0 A
V_R = 200 V
4.0 V, 1 MHz
T_A = 25 °C
T_A = 25 °C
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
V_BR
200 (minimum)
V_F
0.97
0.65
I_R
0.8
0.6
C_J
110
Notes
(1) _{Pulse test: 300 µs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width ≤ 40 ms}
MAX.
-
1.23
0.73
40
4
-
UNIT
V
µA
mA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VSB2200S
Typical thermal resistance ⁽¹⁾
R_θJA
88
R_θJL
20
Note
(1) _{Units mounted on PCB with 2 mm x 2 mm copper pad areas 0.375" (9.5 mm) lead length, free air}
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
VSB2200S-M3/54
0.34
54
VSB2200S-M3/73
0.34
73
BASE QUANTITY
5500
3000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
2.4
2.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1.6
1.2
0.8
0.4
0
0
25 50 75 100 125 150 175
Ambient Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
1.8
D = 0.8
1.6
D = 0.3 ^{D = 0.5}
1.4
D = 0.2
1.2
D = 0.1
D = 1.0
1.0
0.8
0.6
T
0.4
0.2
0
0
D = t_p/T
t_p
0.4
0.8
1.2
1.6
2.0
2.4
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 89142
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Revision: 29-Sep-10