VS-VSUD405CW60 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Reduced RFI and EMI

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VS-VSUD405CW60
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
I_F = 50 A, 
dI_F/dt = 500 A/μs,
V_R = 200 V
-
124
-
-
222
-
-
24
-
-
45
-
-
1466
-
-
5000
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Thermal resistance, junction to case
per diode
per module
R_thJC
Thermal resistance, case to heatsink
per module
R_thCS
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
Case style
MIN.
-
-
-
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
TYP.
MAX.
-
0.19
-
0.095
0.10
-
68
-
2.4
-
-
40 (4.6)
-
18 (2.1)
-
40 (4.6)
-
80
-
35
TO-244 (TO-244AB)
UNITS
°C/W
g
oz.
lbf · in
(N · m)
lbf · in
1000
100 ^{TJ = 175 °C}
T_J = 125 °C
10
T_J = 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
1000
100
10
T_J = 175 °C
T_J = 125 °C
1
0.1
0.01
T_J = 25 °C
0.001
0
100 200 300 400 500 600
V_R - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
(Per Leg)
Revision: 03-Nov-16
2
Document Number: 94687
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