VS-VSKT26 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Low thermal resistance

VS-VSKT26.., VS-VSKH26.., VS-VSKL26.., VS-VSKN26.. Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER ^VOLTAGE
CODE
04
06
08
VS-VSK.26
10
12
14
16
V_RRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V_RSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
V_DRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
400
600
800
1000
1200
1400
1600
I_RRM, I_DRM
AT 125 °C
mA
15
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current (thyristors)
Maximum average forward current (diodes)
I_T(AV)
I_F(AV)
TEST CONDITIONS
180° conduction, half sine wave,
T_C = 85 °C
VALUES
27
Maximum continuous RMS on-state current,
as AC switch
I_O(RMS)
or
I_(RMS)
I_(RMS)
60
Maximum peak, one-cycle non-repetitive
I_TSM
or
on-state or forward current
I_FSM
Maximum I²t for fusing
I²t
Maximum I²ïƒ–t for fusing
I²ïƒ–t ⁽¹⁾
Maximum value or threshold voltage
V_T(TO) ⁽²⁾
Maximum value of on-state 
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current
Maximum latching current
Notes
(1) _I2_{t for time tx = I}2_{t x tx}
(2) _{Average power = VT(TO) x IT(AV) + rt x (IT(RMS))}2
(3) _{16.7 % x  x IAV < I <  x IAV}
(4) _{I >  x IAVï€} 
r_t ⁽²⁾
V_TM
V_FM
dI/dt
I_H
I_L
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V_RRM
reapplied
Sinusoidal
half wave,
initial T_J = T_J maximum
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V_RRM
reapplied
Initial T_J = T_J maximum
t = 0.1 ms to 10 ms, no voltage reapplied 
T_J = T_J maximum
Low level ⁽³⁾
High level ⁽⁴⁾
T_J = T_J maximum
Low level ⁽³⁾
High level ⁽⁴⁾
T_J = T_J maximum
I_TM =  x I_T(AV)
I_FM =  x I_F(AV)
T_J = 25 °C
T_J = 25 °C, from 0.67 V_DRM,
I_TM =  x I_T(AV), I_g = 500 mA, t_r < 0.5 μs, t_p > 6 μs
T_J = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
T_J = 25 °C, anode supply = 6 V, resistive load
400
420
335
350
800
730
560
510
8000
0.86
1.09
9.58
7.31
1.65
150
200
400
UNITS
A
A²s
A²ïƒ–s
V
m
V
A/μs
mA
Revision: 21-Mar-14
2
Document Number: 94629
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