VS-VSKDS409 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low forward voltage drop

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VS-VSKDS409/150
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
Maximum dynamic peak reverse voltage
V_AV
TEST CONDITIONS
50 % duty cycle at T_C = 105 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
T_J = 25 °C, I_AS = 1.8 A, L = 10 mH
VALUES
200
20 000
2300
15
1
170
UNITS
A
mJ
A
V
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Maximum RMS insulation voltage
I_RM
C_T
L_S
dV/dt
V_INS
TEST CONDITIONS
200 A
400 A
T_J = 25 °C
200 A
400 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
50 Hz
VALUES UNITS
1.03
1.33
V
0.85
1.13
6
mA
85
6000
pF
5.0
nH
10 000
V/μs
3000 (1 min)
V
3600 (1 s)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum junction and storage 
temperature range
Maximum thermal resistance, 
junction to case per leg
Typical thermal resistance, 
case to heatsink per module
T_J, T_Stg
R_thJC
DC operation
R_thCS
-55 to +175 °C
0.32
°C/W
0.1
Approximate weight
75
g
2.7
oz.
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the torque
4
should be rechecked after a period of 3 h to allow for the
Nm
spread of the compound.
3
Case style
JEDEC^®
TO-240AA compatible
Revision: 19-Mar-14
2
Document Number: 94649
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