VS-VSKDS220 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Low forward voltage drop

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VS-VSKDS220/030
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 110 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 15 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
110
18 000
2000
99
22
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
I_RM
C_T
L_S
dV/dt
TEST CONDITIONS
110 A
220 A
T_J = 25 °C
110 A
220 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
Maximum RMS insulation voltage
V_INS
50 Hz
VALUES UNITS
0.59
0.78
V
0.57
0.82
10
mA
650
7400
pF
7.0
nH
10 000
V/µs
3000 (1 min)
V
3600 (1 s)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage 
temperature range
Maximum thermal resistance, 
junction to case per leg
Typical thermal resistance, 
case to heatsink per module
SYMBOL
T_J, T_Stg
TEST CONDITIONS
R_thJC
DC operation
R_thCS
VALUES UNITS
-55 to +150 °C
0.52
°C/W
0.1
Approximate weight
75
g
2.7
oz.
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the torque
4
should be rechecked after a period of 3 h to allow for the
Nm
spread of the compound.
3
Case style
JEDEC^®
TO-240AA compatible
Revision: 29-Sep-15
2
Document Number: 94639
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