VS-VSKDS209 Datasheet, PDF (2/6 Pages) Vishay Siliconix – High frequency operation

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VS-VSKDS209/150
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current per leg
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy
E_AS
Repetitive avalanche current
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 113 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V_RRM applied
T_J = 25 °C, I_AS = 1.8 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
VALUES
100
11 300
1600
15
1
UNITS
A
mJ
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
V_FM
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
I_RM
C_T
L_S
dV/dt
TEST CONDITIONS
100 A
200 A
T_J = 25 °C
100 A
200 A
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
V_R = Rated V_R
V_R = 5 V_DC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V_R
Maximum RMS insulation voltage
V_INS
50 Hz
VALUES UNITS
1.01
1.35
V
0.85
1.13
6
mA
85
3000
pF
7.0
nH
10 000
V/μs
3000 (1 min)
V
3600 (1 s)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage 
temperature range
Maximum thermal resistance, 
junction to case per leg
Typical thermal resistance, 
case to heatsink per module
SYMBOL
T_J, T_Stg
TEST CONDITIONS
R_thJC
DC operation
R_thCS
VALUES UNITS
-55 to +175 °C
0.52
°C/W
0.1
Approximate weight
75
g
2.7
oz.
Mounting torque ± 10 %
to heatsink
busbar
A mounting compound is recommended and the torque
4
should be rechecked after a period of 3 hours to allow for
Nm
the spread of the compound.
3
Case style
JEDEC^®
TO-240AA compatible
Revision: 28-Sep-15
2
Document Number: 93230
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