VS-UFB310CB40 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrasoft reverse recovery current shape

www.vishay.com
VS-UFB310CB40
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 μA
400
-
I_F = 100 A
-
1.11
I_F = 100 A, T_J = 125 °C
-
0.99
Forward voltage, per leg
V_FM
I_F = 100 A, T_J = 175 °C
I_F = 200 A
I_F = 200 A, T_J = 125 °C
I_F = 200 A, T_J = 175 °C
V_R = V_R rated
-
0.97
-
1.3
-
1.22
-
1.25
-
1.3
Reverse leakage current, per leg
I_RM
V_R = V_R rated, T_J = 125 °C
-
100
V_R = V_R rated, T_J = 175 °C
-
1
Junction capacitance, per leg
C_T
V_R = 400 V
-
100
MAX.
-
1.34
1.1
-
1.6
1.4
-
50
-
4
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
I_F = 1.0 A, dI_F/dt = 400 A/μs, V_R = 30 V -
39
-
Reverse recovery time, per leg
t_rr
T_J = 25 °C
-
89
-
Peak recovery current, per leg
Reverse recovery charge, per leg
T_J = 125 °C
-
184
-
I_RRM
T_J = 25 °C
I_F = 50 A
-
9
dI_F/dt = 200 A/μs
-
T_J = 125 °C
V_R = 200 V
-
20
-
T_J = 25 °C
Q_rr
T_J = 125 °C
-
400
-
-
1840
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range
Junction to case, single leg conducting
Junction to case, both leg conducting
T_J, T_Stg
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-55
-
-
-
-
-
-
TYP.
MAX.
UNITS
-
175
°C
-
0.19
-
0.095
°C/W
0.07
-
30
-
g
-
1.1 (9.7) Nm (lbf.in)
-
1.3 (11.5) Nm (lbf.in)
SOT-227 not insulated
Revision: 31-May-16
2
Document Number: 93608
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000