VS-UFB250FA60 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB250FA60
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 μA
Forward voltage
I_F = 100 A
V_FM
I_F = 100 A, T_J = 175 °C
Reverse leakage current
V_R = V_R rated
I_RM
T_J = 175 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 600 V
600
-
-
1.02
-
0.87
-
1.3
-
-
-
72
MAX.
-
1.19
1.02
50
4
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
T_J = 25 °C
-
T_J = 150 °C
-
I_RRM
T_J = 25 °C
I_F = 50 A
dI_F/dt = 500 A/μs
-
T_J = 150 °C _{VR = 200 V}
-
T_J = 25 °C
-
Q_rr
T_J = 150 °C
-
166
291
41
64
3.5
10.0
MAX.
-
-
-
-
-
-
UNITS
ns
A
μC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
0.43
-
0.215
0.05
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
Revision: 31-May-16
2
Document Number: 93626
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000