VS-UFB130FA40 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Fully insulated package

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VS-UFB130FA40
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS PER DIODE (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Cathode to anode breakdown voltage
V_BR
I_R = 100 μA
Forward voltage
I_F = 60 A
V_FM
I_F = 60 A, T_J = 175 °C
Reverse leakage current
V_R = V_R rated
I_RM
T_J = 175 °C, V_R = V_R rated
Junction capacitance
C_T
V_R = 400 V
400
-
-
1.16
-
0.93
-
-
-
-
-
67
MAX.
-
1.37
1.09
50
1
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
-
T_J = 25 °C
-
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
-
I_F = 50 A
-
dI_F/dt = 200 A/μs
V_R = 200 V
-
-
T_J = 125 °C
-
40
86
155
8.4
18.4
350
1400
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case, single leg conducting
Junction to case, both leg conducting
R_thJC
Case to heatsink
Weight
R_thCS
Flat, greased surface
Mounting torque
Torque to terminal
Torque to heatsink
Case style
MIN.
-
-
-
-
-
-
TYP.
MAX.
-
0.72
-
0.36
0.10
-
30
-
-
1.1 (9.7)
-
1.3 (11.5)
SOT-227
UNITS
°C/W
g
Nm (lbf.in)
Nm (lbf.in)
1000
100
T_J = 175 °C
T_J = 25 °C
10
1
0
0.5
1
1.5
2
2.5
V_F - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Leg)
1000
100
T_J = 175 °C
10
1
0.1
0.01
T_J = 25 °C
0.001
0
50
100
150
200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 31-May-16
2
Document Number: 93602
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